R&S®SMAB-B710N Improved Close-in Phase Noise Performance

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R&S®SMAB-B710N Improved Close-in Phase Noise Performance

Технические характеристики

Характеристики - R&S®SMAB-B710N Improved Close-in Phase Noise Performance

Key facts
SSB phase noise
f = 1 GHz offset frequency = 10 kHz 1 Hz measurement bandwidth with option R&S®SMAB-B710N–140 dBc, –145 dBc (typ.)

Brief description The phase noise close to the carrier can be further improved with option R&S®SMAB-B710N. It can be used with option R&S®SMAB-B103.
Specifications Specified values in plain text, typical values in brackets ( ), measured values in brackets ( ) and italic.
SSB phase noise in dBc (1 Hz) , CW, level = 10 dBm or maximum available output power, whichever is lower
Carrier frequencyOffset frequency
1 Hz10 Hz100 Hz1 kHz
f = 10 MHz(–116)–124 (–132)–136 (–142)–147 (–155)
f = 100 MHz(–101)–117 (–122)–129 (–136)–144 (–150)
f = 1 GHz(–82)–97 (–103)–111 (–116)–131 (–138)
f = 2 GHz(–76)–91 (–97)–105 (–110)–125 (–131)
f = 3 GHz(–72)–87 (–93)–101 (–106)–121 (–128)
SSB phase noise in dBc (1 Hz) , CW, level = 10 dBm or maximum available output power, whichever is lower
Carrier frequencyOffset frequency
10 kHz100 kHz1 MHz10 MHz
f = 10 MHz–157 (–164)–160 (–165)–161 (–166)
f = 100 MHz–155 (–160)–155 (–160)–162 (–166)–162 (–168)
f = 1 GHz–140 (–145)–138 (–143)–145 (–151)–160 (–165)
f = 2 GHz–134 (–139)–132 (–137)–139 (–145)–159 (–165)
f = 3 GHz–130 (–135)–128 (–133)–136 (–143)–159 (–164)